RU30L70L p-channel advanced power mosfet ? -30v/-70a, r ds (on) =5.5m ? (typ.)@v gs =-10v r ds (on) =9m ? (typ.)@v gs =-4.5v ? low on-resistance ? super high dense cell design ? esd protected pin description features d ? esd protected ? 100% avalanche tested ? 175c operating temperature ? lead free and green devices available (rohs compliant) applications to252 g s d ?power management ?load switching pp p channel mosfet g s symbol rating unit v dss -30 parameter common ratings (t c =25c unless otherwise noted) drain-source voltage v absolute maximum ratings p - channel mosfet v gss 20 t j 175 c t stg -55 to 175 c i s t c =25c -70 a maximum junction temperature storage temperature range diode continuous forward current mounted on large heat sink v gate-source voltage i dp t c =25c -280 a t c =25c -70 t c =100c -49 t c =25c 90 t 100c 300 s pulse drain current tested continuous drain current(v gs =-10v) maximum power dissipation mounted on large heat sink i d a p d w t c =100c 45 r ? jc 1.65 c/w r ? ja 100 c/w e as 110 mj thermal resistance-junction to case drain-source avalanche ratings avalanche energy, single pulsed p d thermal resistance-junction to ambient as ruichips semiconductor co., ltd rev. a? mar., 2015 1 www.ruichips.com
RU30L70L el t i l ch t i ti min. typ. max. bv dss drain-source breakdown voltage -30 v static characteristics v gs =0v, i ds =-250a v 30v v 0v symbol parameter test condition RU30L70L unit el ec t r i ca l ch arac t er i s ti cs (t c =25c unless otherwise noted) -1 t j =125c -30 v gs(th) gate threshold voltage -1 -2.5 v i gss gate leakage current 10 a 5.5 6.5 m ? 9 11
r ds(on) drain-source on-state resistance v 45v i 28a v ds =v gs , i ds =-250a i dss zero gate voltage drain current v ds =-30v, v gs =0v a v gs =20v, v ds =0v v gs =-10v, i ds =-35a 911m ? v sd diode forward voltage -1.2 v t rr reverse recovery time 89 ns q rr reverse recovery charge 55 nc r ds(on) v gs =-4.5v, i ds =-28a i sd =-35a, v gs =0v i sd =-35a, dl sd /dt=100a/s diode characteristics r g gate resistance 3.6 ? c iss input capacitance 4680 c oss output capacitance 505 c rss reverse transfer capacitance 320 v gs =0v,v ds =0v,f=1mhz v gs =0v, v ds =-15v, frequency=1.0mhz pf dynamic characteristics t d(on) turn-on delay time 35 t r turn-on rise time 66 t d(off) turn-off delay time 74 t f turn-off fall time 30 v dd =-15v,i ds =-35a, v gen =-10v,r g =6 ? gate char g e characteristics ns q g total gate charge 86 q gs gate-source charge 20 q gd gate-drain charge 25 notes: v ds =-24v, v gs =-10v, i ds =-35a pulse width limited by safe operating area. gate charge characteristics nc limited by t jmax , i as =-21a, v dd =-24v, r g = 50 ? , starting t j = 25 c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing. ruichips semiconductor co., ltd rev. a? mar., 2015 2 www.ruichips.com
RU30L70L od i dm ki i f ti device marking package packaging quantity reel size tape width RU30L70L RU30L70L to252 tape&reel 2500 13'' 16mm o r d er i ng an d m ar ki ng i n f orma ti on ruichips semiconductor co., ltd rev. a? mar., 2015 3 www.ruichips.com
RU30L70L tilch titi t yp i ca l ch arac t er i s ti cs 50 60 70 80 e nt (a) drain current 60 70 80 90 100 e r (w) power dissipation 0 10 20 30 40 50 -i d - drain curr e vgs=-10v limit by ? package 0 10 20 30 40 50 60 p d -pow e 25 50 75 100 125 150 175 t j - junction temperature ( c) 10 12 14 n ce (m ? ) drain current ids=-35a 0 25 50 75 100 125 150 175 t j - junction temperature ( c) 100 a ) safe operation area 10s 100s 1ms limited 2 4 6 8 10 ds(on) - on - resista n 0.1 1 10 i d - drain current ( a 10ms dc r ds(on) 0 012345678910 r -v gs - gate-source voltage (v) 0.01 0.01 0.1 1 10 100 - i -v ds - drain-source voltage (v) t c =25c w ) thermal transient impedance 1 10 r mal response (c/ w duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1e-05 0.0001 0.001 0.01 0.1 1 zthjc - the r square wave pulse duration (sec) single pulse r jc = 1.65c/w ruichips semiconductor co., ltd rev. a? mar., 2015 4 www.ruichips.com
RU30L70L tilch titi t yp i ca l ch arac t er i s ti cs 60 80 100 u rrent (a) output characteristics -8,-9,-10v 10 12 14 16 a nce (m ? ) drain-source on resistance v gs =-4.5v 0 20 40 0 1 2 3 4 5 6 7 8 9 10 -i d -drain c u -1v -2.5v -4.5v 0 2 4 6 8 0 10 20 30 40 50 60 70 80 r ds(on) - on resist a v gs =-10v 0 1 2 3 4 5 6 7 8 9 10 -v ds - drain-source voltage (v) 0 10 20 30 40 50 60 70 80 -i d - drain current (a) 2.0 2.5 t ance drain-source on resistance v gs =-10v i ds =-35a 10 100 t (a) source-drain diode forward 0.5 1.0 1.5 o rmalized on resis t t j =25c rds ( on ) =5.5m ? 0.1 1 10 -i s - source curren t t j =25c t j =175c 0.0 -50 -25 0 25 50 75 100 125 150 175 n o t j - junction temperature ( c) () 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd - source-drain voltage (v) 7000 8000 f ) capacitance frequency=1 0mhz 5 e (v) gate charge v ds =- 24v 2000 3000 4000 5000 6000 7000 c - capacitance (p f ciss frequency=1 . 0mhz 2 3 4 g ate-source voltag e v ds 24v i ds =-35a 0 1000 2000 110 c -v ds - drain-source voltage (v) coss crss 0 1 0 20406080100 -v gs - g q g - gate charge (nc) ruichips semiconductor co., ltd rev. a? mar., 2015 5 www.ruichips.com
RU30L70L al httci it dw f a va l anc h e t es t ci rcu it an d w ave f orms switching time test circuit and waveforms ruichips semiconductor co., ltd rev. a? mar., 2015 6 www.ruichips.com
RU30L70L pk if ti p ac k age i n f orma ti on to252 1 1 1 1 2 2 mm inch min nom max min nom max a 2.200 2.300 2.400 0.087 0.091 0.094 a1 * * 0.100 * * 0.004 b 0.660 0.760 0.860 0.026 0.030 0.034 b3 5.130 5.295 5.460 0.202 0.208 0.215 c 0.470 0.535 0.600 0.019 0.021 0.024 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.800 10.100 10.400 0.386 0.398 0.409 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 * 8 0 * 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref 5.30 ref 0.20 ref 2.743 ref 0.108 ref min nom max min nom max a 2.200 2.300 2.400 0.087 0.091 0.094 a1 * * 0.100 * * 0.004 b 0.660 0.760 0.860 0.026 0.030 0.034 b3 5.130 5.295 5.460 0.202 0.208 0.215 c 0.470 0.535 0.600 0.019 0.021 0.024 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.800 10.100 10.400 0.386 0.398 0.409 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 * 8 0 * 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref 5.30 ref 0.20 ref 2.743 ref 0.108 ref min nom max min nom max a 2.200 2.300 2.400 0.087 0.091 0.094 a1 * * 0.100 * * 0.004 b 0.660 0.760 0.860 0.026 0.030 0.034 b3 5.130 5.295 5.460 0.202 0.208 0.215 c 0.470 0.535 0.600 0.019 0.021 0.024 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.800 10.100 10.400 0.386 0.398 0.409 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 * 8 0 * 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref 5.30 ref 0.20 ref 2.743 ref 0.108 ref ruichips semiconductor co., ltd rev. a? mar., 2015 7 www.ruichips.com min nom max min nom max a 2.200 2.300 2.400 0.087 0.091 0.094 a1 * * 0.100 * * 0.004 b 0.660 0.760 0.860 0.026 0.030 0.034 b3 5.130 5.295 5.460 0.202 0.208 0.215 c 0.470 0.535 0.600 0.019 0.021 0.024 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 4.700 4.810 4.920 0.185 0.189 0.194 e h 9.800 10.100 10.400 0.386 0.398 0.409 l 1.400 1.550 1.700 0.055 0.061 0.067 l1 l2 l3 0.900 1.075 1.250 0.035 0.042 0.049 l4 0.600 0.800 1.000 0.024 0.031 0.039 0 * 8 0 * 8 1 5 7 9 5 7 9 2 5 7 9 5 7 9 0.510 bsc 0.020 bsc symbol mm inch 2.28 ref 0.09 ref 5.30 ref 0.20 ref 2.743 ref 0.108 ref
RU30L70L ct s i c us t omer s erv i ce worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86-755) 8311-5334 fax: (86-755) 8311-4278 e-mail: sales-sz @ ruichi p s.com @p ruichips semiconductor co., ltd rev. a? mar., 2015 8 www.ruichips.com
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